Ion Implantation

Ion implantation is a materials engineering process where ionized atoms or molecules are accelerated to high energy and injected into a solid substrate. This process precisely modifies the substrate's physical, chemical, or electrical properties by introducing these ions into its crystal lattice. A primary application is the introduction of impurity elements (dopants) into semiconductor materials. This doping process is fundamental to modern semiconductor manufacturing, allowing for the precise control of electrical conductivity.

A typical ion implanter consists of several key components: an ion source that generates the desired ions, a mass analyzer to select the specific ion species, an accelerator tube that accelerates the ions to the required energy, a scanning system to distribute the ion beam uniformly across the substrate, and a dose control system to precisely monitor and regulate the ion dose. The end station, where implantation occurs, is maintained under high vacuum to ensure process integrity and prevent beam scattering or contamination.

Matsusada Precision provides a complete range of high voltage power supplies that are essential for the various subsystems of an ion implanter. These power supplies support key functions, including:

Ion Source Filaments
Extraction Grids
Analyzer Magnets (Constant Current)
Ion Acceleration (up to 200kV)
Ion Beam Scanning (Fast Bipolar)
Secondary Electron Suppression

Company	Website	Models
Applied Materials	Ion Implant	VIISTA^® 3000XP VIISTA^® 900 3D VIISTA^® 900XP VIISTA^® HCP VIISTA^® PLAD VIISTA^® TRIDENT
Varian Semiconductor Equipment (now Applied Materials)	Ion Implant
Axcelis	Ion Implantation \| Purion Ion Implanters	Purion H Purion Dragon Purion H200 Purion XE Purion EXE Purion VXE Purion Xemax Purion XE Purion M
Nissin	Nissin Ion Equipment Co., Ltd.	IMPHEAT EXCEED400HY EXCEED3000AH/-Ev/-Evo/-Evo2 EXCEED9600A/-Ev/-Evo/-Evo2
SEN	Sumitomo Heavy Industries Ion Technology Co., Ltd.	SHX-Ⅲ(HC) NV-GSDⅢ-180 MC3-Ⅱ(MC) S-UHE(HE) SS-UHE(HE) Saion
Ulvac	ULVAC - Ion Implanters	IMX-3500 SOPHI-200/260 IH-860
AIBT	Advanced Ion Beam Technology, Inc. AIBT	iPulsar Plus

Related words:

vacuum
ion
electromagnet
accelerator
surface modification
mass spectrometry
scanning
semiconductor
dose
doping
beamline
Faraday cup
annealing
channeling effect
amorphization

Recommended products

As outlined above, Matsusada Precision offers a comprehensive lineup of power supplies tailored for each critical function within an ion implanter. Our product range includes solutions for ion source filaments, extraction grids, analyzer magnets, ion acceleration, beam scanning, and secondary electron suppression.

HIB series

voltage range: 60 kV

current: 5 A

Ion Beam Power Supply

The rack-mountable HIB series provides stable ion beam power, where each channel can be selected separately.

PBR series

voltage range: 80 to 1500 V

current: 20 to 360 A

power: 5 kW, 10 kW, 15 kW

Regenerative DC Power Supply

Bidirectional power supply with power running and regeneration

PRT series

voltage range: 80 to 1500 V

current: 33 to 510 A

power: 5 to 15 kW

High Power Autoranging DC Power Supply

Features autoranging output and a variable internal resistance function.

AKP series

voltage range: 1 to 120 kV

current: 0.1 to 13 A

power: 12 to 13 kW

High-voltage High-current power supply

The AKP series is scalable up to 52 kW using its proprietary master-slave function.

AK series

voltage range: 1 to 120 kV

current: 25 to 4250 mA

power: 3 to 6.4 kW

High power 6.4 kW/Compact
High Voltage Power Supply

The AK series delivers high power (6.4 kW) in a compact 4U package. Digital interface is available.

AU series

voltage range: 1 to 120 kV

current: 0.25 to 2200 mA

power: 30 to 2200 W

Rack mount High Voltage DC Power Supply

The AU series offers a low-profile, lightweight design with over 300 models. It features remote control and monitoring functions, with a digital interface available.