A Fast Atom Beam (FAB) gun generates a high-energy beam of neutral atoms to prepare semiconductor wafer surfaces for room-temperature bonding.
Unlike conventional ion guns, FAB sources emit neutral atoms, which prevents electrical charge build-up (charge-up) on the substrate surface. This enables the effective removal of oxide layers and contaminants while minimizing damage to the underlying surface structure.
Systems incorporating FAB guns are a core component of Surface-Activated Bonding (SAB) equipment, facilitating high-quality wafer bonding processes.
For more information on Surface-Activated Bonding (SAB), please refer to our article on "Surface activated bonding (SAB)".
- Related Terms:
-
- Fast Atom Beam (FAB)
- semiconductor
- wafer bonding
- substrate surface
